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Russian nanostructures will boost electronics

Researchers from the National Research Nuclear University «MEPhI» and Institute of Physics of Metals from the Siberian Division of Russian Academy of Sciences have developed nanoheterostructures capable of increasing the high-speed performance of high-frequency microschemes, the press-office of MEPhI said.
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Using new approach, researchers have succeeded in obtaining a heterostructure with the exceptionally smooth surface, with the bulges measuring less than 2 nanometers and the scattering of electrons being maximal. The investigation of capabilities of such material is carried out at temperatures down to 1.8 K and in the strong magnetic field. As a result, the researchers have observed a series of quantum effects.

It should be noted that up to now, the researchers have shown only theoretical potential of applying such structures in electronics, as no particular devices have been created so far. However, the perspective of such materials is tremendous. For synthesized heterostructures, the upper limit of functioning speed of microschemes is estimated to be 200 GHz. This value outperforms by more than an order of magnitude all microschemes available now on the market.

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